[854pcs Stock]
- Bilang ng Bahagi:
- 2SK3309(Q)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 450V 10A TO220FL.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga module ng Power driver, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Single, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Single and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage 2SK3309(Q) electronic components. 2SK3309(Q) can be shipped within 24 hours after order. If you have any demands for 2SK3309(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK3309(Q) Mga katangian ng produkto
Bilang ng Bahagi :
2SK3309(Q)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 450V 10A TO220FL
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
450V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
920pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
65W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220FL
Pakete / Kaso :
TO-220-3, Short Tab
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