RW1E025RPT2CR Pagpepresyo (USD) [1208286pcs Stock]
- 1 pcs$0.03384
- 8,000 pcs$0.03367
- Bilang ng Bahagi:
- RW1E025RPT2CR
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- MOSFET P-CH 30V 2.5A WEMT6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Arrays, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor RW1E025RPT2CR electronic components. RW1E025RPT2CR can be shipped within 24 hours after order. If you have any demands for RW1E025RPT2CR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RW1E025RPT2CR Mga katangian ng produkto
Bilang ng Bahagi :
RW1E025RPT2CR
Tagagawa :
Rohm Semiconductor
Paglalarawan :
MOSFET P-CH 30V 2.5A WEMT6
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
75 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
700mW (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
6-WEMT
Pakete / Kaso :
SOT-563, SOT-666
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