Diodes Incorporated - DMN2013UFX-7

KEY Part #: K6522447

DMN2013UFX-7 Pagpepresyo (USD) [297714pcs Stock]

  • 1 pcs$0.12424

Bilang ng Bahagi:
DMN2013UFX-7
Tagagawa:
Diodes Incorporated
Detalyadong Paglalarawan:
MOSFET 2N-CH 20V 10A 6-DFN.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Diode - Rectifiers - Single, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Programmable Unijunction, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Single and Thyristors - Mga SCR ...
Kumpetensyang Pakinabang:
We specialize in Diodes Incorporated DMN2013UFX-7 electronic components. DMN2013UFX-7 can be shipped within 24 hours after order. If you have any demands for DMN2013UFX-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2013UFX-7 Mga katangian ng produkto

Bilang ng Bahagi : DMN2013UFX-7
Tagagawa : Diodes Incorporated
Paglalarawan : MOSFET 2N-CH 20V 10A 6-DFN
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual) Common Drain
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 10A (Ta)
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id : 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 57.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds : 2607pF @ 10V
Kapangyarihan - Max : 2.14W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 6-VFDFN Exposed Pad
Package ng Tagabigay ng Device : W-DFN5020-6

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