1N6622US Pagpepresyo (USD) [8145pcs Stock]
- 1 pcs$7.31121
- 10 pcs$6.64487
- 25 pcs$6.14653
- 100 pcs$5.64814
- Bilang ng Bahagi:
- 1N6622US
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 660V 1.2A A-MELF. Rectifiers Rectifier
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Single, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation 1N6622US electronic components. 1N6622US can be shipped within 24 hours after order. If you have any demands for 1N6622US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N6622US Mga katangian ng produkto
Bilang ng Bahagi :
1N6622US
Tagagawa :
Microsemi Corporation
Paglalarawan :
DIODE GEN PURP 660V 1.2A A-MELF
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
660V
Kasalukuyang - Average na Rectified (Io) :
1.2A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.4V @ 1.2A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Kasalukuyang - Reverse Leakage @ Vr :
500nA @ 660V
Capacitance @ Vr, F :
10pF @ 10V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SQ-MELF, A
Package ng Tagabigay ng Device :
A-MELF
Operating temperatura - Junction :
-65°C ~ 150°C
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