Bilang ng Bahagi :
1N6622US
Tagagawa :
Microsemi Corporation
Paglalarawan :
DIODE GEN PURP 660V 1.2A A-MELF
Katayuan ng Bahagi :
Active
Boltahe - DC Reverse (Vr) (Max) :
660V
Kasalukuyang - Average na Rectified (Io) :
1.2A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.4V @ 1.2A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Kasalukuyang - Reverse Leakage @ Vr :
500nA @ 660V
Capacitance @ Vr, F :
10pF @ 10V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SQ-MELF, A
Package ng Tagabigay ng Device :
A-MELF
Operating temperatura - Junction :
-65°C ~ 150°C