SSM6N61NU,LF Pagpepresyo (USD) [622023pcs Stock]
- 1 pcs$0.06574
- 3,000 pcs$0.06541
- Bilang ng Bahagi:
- SSM6N61NU,LF
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 4A UDFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage SSM6N61NU,LF electronic components. SSM6N61NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6N61NU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6N61NU,LF Mga katangian ng produkto
Bilang ng Bahagi :
SSM6N61NU,LF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET 2N-CH 20V 4A UDFN
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate, 1.5V Drive
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A
Rds On (Max) @ Id, Vgs :
33 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
410pF @ 10V
Kapangyarihan - Max :
2W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-WDFN Exposed Pad
Package ng Tagabigay ng Device :
6-UDFNB (2x2)
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