SQJ960EP-T1_GE3 Pagpepresyo (USD) [83362pcs Stock]
- 1 pcs$0.46905
- 3,000 pcs$0.39550
- Bilang ng Bahagi:
- SQJ960EP-T1_GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 8A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Mga Module and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SQJ960EP-T1_GE3 electronic components. SQJ960EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ960EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ960EP-T1_GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SQJ960EP-T1_GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2N-CH 60V 8A
Serye :
Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
36 mOhm @ 5.3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
735pF @ 25V
Kapangyarihan - Max :
34W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
PowerPAK® SO-8 Dual
Package ng Tagabigay ng Device :
PowerPAK® SO-8 Dual
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