IRF9910TRPBF Pagpepresyo (USD) [174721pcs Stock]
- 1 pcs$0.21170
- 4,000 pcs$0.20099
- Bilang ng Bahagi:
- IRF9910TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 10A/12A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Single, Mga Transistor - JFET, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Single and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF9910TRPBF electronic components. IRF9910TRPBF can be shipped within 24 hours after order. If you have any demands for IRF9910TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9910TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF9910TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 20V 10A/12A 8-SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A, 12A
Rds On (Max) @ Id, Vgs :
9.3 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 10V
Kapangyarihan - Max :
2W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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