Bilang ng Bahagi :
BSO615NGHUMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 60V 2.6A 8SOIC
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.6A
Rds On (Max) @ Id, Vgs :
150 mOhm @ 2.6A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 25V
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
PG-DSO-8