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  1. Bahay
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  5. 1N5622US

Microsemi Corporation - 1N5622US

KEY Part #: K6426891

1N5622US Pagpepresyo (USD) [15458pcs Stock]

  • 1 pcs$2.81331
  • 153 pcs$2.79931
Bilang ng Bahagi:
1N5622US
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 1KV 1A D5A. Rectifiers Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga SCR, Thyristors - Mga TRIAC, Mga Transistor - JFET, Diode - Zener - Single and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation 1N5622US electronic components. 1N5622US can be shipped within 24 hours after order. If you have any demands for 1N5622US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5622US Mga katangian ng produkto

Bilang ng Bahagi : 1N5622US
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE GEN PURP 1KV 1A D5A
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 1000V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.3V @ 3A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2µs
Kasalukuyang - Reverse Leakage @ Vr : 500nA @ 1000V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SQ-MELF, A
Package ng Tagabigay ng Device : D-5A
Operating temperatura - Junction : -65°C ~ 200°C

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