DMN3900UFA-7B Pagpepresyo (USD) [833598pcs Stock]
- 1 pcs$0.04437
- 10,000 pcs$0.03943
- Bilang ng Bahagi:
- DMN3900UFA-7B
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 0.55A DMN3900.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver, Transistor - IGBTs - Arrays, Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Arrays, Mga Transistor - JFET, Thyristors - Mga TRIAC and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN3900UFA-7B electronic components. DMN3900UFA-7B can be shipped within 24 hours after order. If you have any demands for DMN3900UFA-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3900UFA-7B Mga katangian ng produkto
Bilang ng Bahagi :
DMN3900UFA-7B
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 30V 0.55A DMN3900
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
550mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
760 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.7nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
42.2pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
390mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
X2-DFN0806-3
Pakete / Kaso :
3-XFDFN
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