IPT60R080G7XTMA1 Pagpepresyo (USD) [25134pcs Stock]
- 1 pcs$1.66648
- 2,000 pcs$1.65819
- Bilang ng Bahagi:
- IPT60R080G7XTMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 29A HSOF-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPT60R080G7XTMA1 electronic components. IPT60R080G7XTMA1 can be shipped within 24 hours after order. If you have any demands for IPT60R080G7XTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPT60R080G7XTMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPT60R080G7XTMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 650V 29A HSOF-8
Serye :
CoolMOS™ G7
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
29A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 9.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1640pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
167W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-HSOF-8-2
Pakete / Kaso :
8-PowerSFN
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