Infineon Technologies - IPW60R120C7XKSA1

KEY Part #: K6417070

IPW60R120C7XKSA1 Pagpepresyo (USD) [24442pcs Stock]

  • 1 pcs$1.73192
  • 240 pcs$1.72330

Bilang ng Bahagi:
IPW60R120C7XKSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 600V 19A TO247-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Mga Module and Transistor - Bipolar (BJT) - Single ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPW60R120C7XKSA1 electronic components. IPW60R120C7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R120C7XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R120C7XKSA1 Mga katangian ng produkto

Bilang ng Bahagi : IPW60R120C7XKSA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 600V 19A TO247-3
Serye : CoolMOS™ C7
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 19A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 120 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 400V
Tampok ng FET : -
Power Dissipation (Max) : 92W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : PG-TO247-3
Pakete / Kaso : TO-247-3

Maaari ka ring Makisalamuha sa
  • ZVN3306A

    Diodes Incorporated

    MOSFET N-CH 60V 270MA TO92-3.

  • FQN1N60CTA

    ON Semiconductor

    MOSFET N-CH 600V 300MA TO-92.

  • TK33S10N1Z,LQ

    Toshiba Semiconductor and Storage

    MOSFET N-CH 100V 33A DPAK.

  • IRFR4105TRPBF

    Infineon Technologies

    MOSFET N-CH 55V 27A DPAK.

  • IRLR3636TRPBF

    Infineon Technologies

    MOSFET N-CH 60V 50A DPAK.

  • FDD4685

    ON Semiconductor

    MOSFET P-CH 40V 8.4A DPAK.