Microsemi Corporation - MSC020SDA120B

KEY Part #: K6441292

MSC020SDA120B Pagpepresyo (USD) [6516pcs Stock]

  • 1 pcs$6.32404

Bilang ng Bahagi:
MSC020SDA120B
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE SCHOTTKY 1.2KV 43A TO247. Schottky Diodes & Rectifiers 1200 V, 20 A SiC SBD
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Mga Transistor - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC and Thyristors - Mga SCR ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation MSC020SDA120B electronic components. MSC020SDA120B can be shipped within 24 hours after order. If you have any demands for MSC020SDA120B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MSC020SDA120B Mga katangian ng produkto

Bilang ng Bahagi : MSC020SDA120B
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE SCHOTTKY 1.2KV 43A TO247
Serye : -
Katayuan ng Bahagi : Not For New Designs
Uri ng Diode : Silicon Carbide Schottky
Boltahe - DC Reverse (Vr) (Max) : 1200V
Kasalukuyang - Average na Rectified (Io) : 43A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.8V @ 20A
Bilis : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Kasalukuyang - Reverse Leakage @ Vr : 200µA @ 1200V
Capacitance @ Vr, F : 104pF @ 400V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-247-2
Package ng Tagabigay ng Device : TO-247
Operating temperatura - Junction : -55°C ~ 175°C

Maaari ka ring Makisalamuha sa
  • VS-HFA04SD60S-M3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 4A TO252AA. Diodes - General Purpose, Power, Switching 4A 600V Ultrafast 17ns HEXFRED

  • VS-E4PH6006L-N3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 60A TO247AD. Rectifiers 600V 60A FRED Pt TO-247 LL 2L

  • VS-EPH3006LHN3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 30A TO247AD. Rectifiers 600V 30A FRED Pt TO-247 LL 2L

  • VS-E4PU6006LHN3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 60A TO247AD. Rectifiers 600V 60A FRED Pt TO-247 LL 2L

  • SFA808G C0G

    Taiwan Semiconductor Corporation

    DIODE GEN PURP 600V 8A TO220AC. Rectifiers 35ns8A 600V Sp Fst Recov Rectifier

  • STTH3010PI

    STMicroelectronics

    DIODE GEN PURP 1KV 30A DOP3I. Diodes - General Purpose, Power, Switching high voltage diode