[3277pcs Stock]
- Bilang ng Bahagi:
- IXTD3N50P-2J
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 500.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Arrays, Mga Transistor - JFET, Thyristors - SCR - Mga Module, Transistor - IGBTs - Mga Module and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTD3N50P-2J electronic components. IXTD3N50P-2J can be shipped within 24 hours after order. If you have any demands for IXTD3N50P-2J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD3N50P-2J Mga katangian ng produkto
Bilang ng Bahagi :
IXTD3N50P-2J
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 500
Serye :
PolarHV™
Katayuan ng Bahagi :
Last Time Buy
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
9.3nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
409pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
70W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Die
Pakete / Kaso :
Die
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