[12476pcs Stock]
- Bilang ng Bahagi:
- PSMN3R8-30LL,115
- Tagagawa:
- NXP USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V QFN3333.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Mga Transistor - JFET, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga SCR, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in NXP USA Inc. PSMN3R8-30LL,115 electronic components. PSMN3R8-30LL,115 can be shipped within 24 hours after order. If you have any demands for PSMN3R8-30LL,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN3R8-30LL,115 Mga katangian ng produkto
Bilang ng Bahagi :
PSMN3R8-30LL,115
Tagagawa :
NXP USA Inc.
Paglalarawan :
MOSFET N-CH 30V QFN3333
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
40A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.7 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2085pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
69W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-DFN3333 (3.3x3.3)
Pakete / Kaso :
8-VDFN Exposed Pad
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