Vishay Semiconductor Diodes Division - RGF1KHE3/5CA

KEY Part #: K6439855

[7500pcs Stock]


    Bilang ng Bahagi:
    RGF1KHE3/5CA
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    DIODE GEN PURP 800V 1A DO214BA.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Arrays, Diode - Zener - Single, Transistor - IGBTs - Arrays and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division RGF1KHE3/5CA electronic components. RGF1KHE3/5CA can be shipped within 24 hours after order. If you have any demands for RGF1KHE3/5CA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RGF1KHE3/5CA Mga katangian ng produkto

    Bilang ng Bahagi : RGF1KHE3/5CA
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : DIODE GEN PURP 800V 1A DO214BA
    Serye : Automotive, AEC-Q101, Superectifier®
    Katayuan ng Bahagi : Discontinued at Digi-Key
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 800V
    Kasalukuyang - Average na Rectified (Io) : 1A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1.3V @ 1A
    Bilis : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 500ns
    Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 800V
    Capacitance @ Vr, F : 8.5pF @ 4V, 1MHz
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : DO-214BA
    Package ng Tagabigay ng Device : DO-214BA (GF1)
    Operating temperatura - Junction : -65°C ~ 175°C

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