Bilang ng Bahagi :
IPD35N10S3L26ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 100V 35A TO252-3
Katayuan ng Bahagi :
Active
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
35A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
24 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
Power Dissipation (Max) :
71W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO252-3-11
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63