FQI4N90TU Pagpepresyo (USD) [75132pcs Stock]
- 1 pcs$0.56880
- 1,000 pcs$0.56597
- Bilang ng Bahagi:
- FQI4N90TU
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 900V 4.2A I2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FQI4N90TU electronic components. FQI4N90TU can be shipped within 24 hours after order. If you have any demands for FQI4N90TU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQI4N90TU Mga katangian ng produkto
Bilang ng Bahagi :
FQI4N90TU
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 900V 4.2A I2PAK
Serye :
QFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
900V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.3 Ohm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
3.13W (Ta), 140W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I2PAK (TO-262)
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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