IRFH8311TRPBF Pagpepresyo (USD) [177240pcs Stock]
- 1 pcs$0.20869
- 4,000 pcs$0.17833
- Bilang ng Bahagi:
- IRFH8311TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N CH 30V 32A PQFN5X6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Diode - Mga Rectifier ng Bridge, Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays, Diode - RF, Thyristors - DIACs, SIDACs, Mga module ng Power driver and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFH8311TRPBF electronic components. IRFH8311TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH8311TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8311TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFH8311TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N CH 30V 32A PQFN5X6
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
32A (Ta), 169A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4960pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
3.6W (Ta), 96W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PQFN (5x6)
Pakete / Kaso :
8-TQFN Exposed Pad
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