TK39N60W5,S1VF Pagpepresyo (USD) [11530pcs Stock]
- 1 pcs$3.08049
- 30 pcs$2.52624
- 120 pcs$2.27974
- 510 pcs$1.91005
- 1,020 pcs$1.66359
- Bilang ng Bahagi:
- TK39N60W5,S1VF
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 38.8A T0247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Single, Transistor - IGBTs - Mga Module and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK39N60W5,S1VF electronic components. TK39N60W5,S1VF can be shipped within 24 hours after order. If you have any demands for TK39N60W5,S1VF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK39N60W5,S1VF Mga katangian ng produkto
Bilang ng Bahagi :
TK39N60W5,S1VF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 600V 38.8A T0247
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
38.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
74 mOhm @ 19.4A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs :
135nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 300V
Tampok ng FET :
-
Power Dissipation (Max) :
270W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247
Pakete / Kaso :
TO-247-3
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