IRFM120ATF Pagpepresyo (USD) [283940pcs Stock]
- 1 pcs$0.13092
- 4,000 pcs$0.13027
- Bilang ng Bahagi:
- IRFM120ATF
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 2.3A SOT-223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - IGBTs - Arrays, Diode - RF, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor IRFM120ATF electronic components. IRFM120ATF can be shipped within 24 hours after order. If you have any demands for IRFM120ATF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFM120ATF Mga katangian ng produkto
Bilang ng Bahagi :
IRFM120ATF
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 100V 2.3A SOT-223
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
200 mOhm @ 1.15A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.4W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-223-4
Pakete / Kaso :
TO-261-4, TO-261AA
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