IXFA3N120 Pagpepresyo (USD) [17085pcs Stock]
- 1 pcs$3.23474
- 10 pcs$2.91215
- 100 pcs$2.39454
- 500 pcs$2.00623
- 1,000 pcs$1.74735
- Bilang ng Bahagi:
- IXFA3N120
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1200V 3A TO-263.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga SCR, Diode - Rectifiers - Single, Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFA3N120 electronic components. IXFA3N120 can be shipped within 24 hours after order. If you have any demands for IXFA3N120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA3N120 Mga katangian ng produkto
Bilang ng Bahagi :
IXFA3N120
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1200V 3A TO-263
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.5 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
200W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-263 (IXFA)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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