TK31V60W5,LVQ Pagpepresyo (USD) [47544pcs Stock]
- 1 pcs$0.86371
- 2,500 pcs$0.85941
- Bilang ng Bahagi:
- TK31V60W5,LVQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N -CH 600V 30.8A DFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - SCR - Mga Module, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Arrays, Diode - Zener - Single, Transistor - IGBTs - Mga Module and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK31V60W5,LVQ electronic components. TK31V60W5,LVQ can be shipped within 24 hours after order. If you have any demands for TK31V60W5,LVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31V60W5,LVQ Mga katangian ng produkto
Bilang ng Bahagi :
TK31V60W5,LVQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N -CH 600V 30.8A DFN
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
109 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
Tampok ng FET :
-
Power Dissipation (Max) :
240W (Tc)
Temperatura ng pagpapatakbo :
150°C (TA)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-DFN-EP (8x8)
Pakete / Kaso :
4-VSFN Exposed Pad
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