SCT2H12NYTB Pagpepresyo (USD) [25402pcs Stock]
- 1 pcs$1.79360
- 400 pcs$1.78468
- Bilang ng Bahagi:
- SCT2H12NYTB
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- 1700V 1.2 OHM 4A SIC FET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Arrays and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor SCT2H12NYTB electronic components. SCT2H12NYTB can be shipped within 24 hours after order. If you have any demands for SCT2H12NYTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT2H12NYTB Mga katangian ng produkto
Bilang ng Bahagi :
SCT2H12NYTB
Tagagawa :
Rohm Semiconductor
Paglalarawan :
1700V 1.2 OHM 4A SIC FET
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
1700V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 1.1A, 18V
Vgs (th) (Max) @ Id :
4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 18V
Vgs (Max) :
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds :
184pF @ 800V
Tampok ng FET :
-
Power Dissipation (Max) :
44W (Tc)
Temperatura ng pagpapatakbo :
175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-268
Pakete / Kaso :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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