IXYS - IXFT12N90Q

KEY Part #: K6409909

IXFT12N90Q Pagpepresyo (USD) [7220pcs Stock]

  • 1 pcs$6.30916
  • 30 pcs$6.27777

Bilang ng Bahagi:
IXFT12N90Q
Tagagawa:
IXYS
Detalyadong Paglalarawan:
MOSFET N-CH 900V 12A TO-268.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - JFET, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistor - Espesyal na Pakay ...
Kumpetensyang Pakinabang:
We specialize in IXYS IXFT12N90Q electronic components. IXFT12N90Q can be shipped within 24 hours after order. If you have any demands for IXFT12N90Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFT12N90Q Mga katangian ng produkto

Bilang ng Bahagi : IXFT12N90Q
Tagagawa : IXYS
Paglalarawan : MOSFET N-CH 900V 12A TO-268
Serye : HiPerFET™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 900V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 90nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2900pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 300W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : TO-268
Pakete / Kaso : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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