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  1. Bahay
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  4. Diode - Rectifiers - Single
  5. 1N5618US

Microsemi Corporation - 1N5618US

KEY Part #: K6441744

1N5618US Pagpepresyo (USD) [9305pcs Stock]

  • 1 pcs$3.78121
  • 10 pcs$3.40441
  • 25 pcs$3.10200
  • 100 pcs$2.79933
  • 250 pcs$2.57235
  • 500 pcs$2.34537
  • 1,000 pcs$2.04275
Bilang ng Bahagi:
1N5618US
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 1A D5A. Rectifiers Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Pre-Biased and Diode - RF ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation 1N5618US electronic components. 1N5618US can be shipped within 24 hours after order. If you have any demands for 1N5618US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5618US Mga katangian ng produkto

Bilang ng Bahagi : 1N5618US
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE GEN PURP 600V 1A D5A
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.3V @ 3A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2µs
Kasalukuyang - Reverse Leakage @ Vr : 500nA @ 600V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SQ-MELF, A
Package ng Tagabigay ng Device : D-5A
Operating temperatura - Junction : -65°C ~ 200°C

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