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  1. Bahay
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  4. Transistor - Mga FET, MOSFET - Single
  5. FCP099N60E

ON Semiconductor - FCP099N60E

KEY Part #: K6417657

FCP099N60E Pagpepresyo (USD) [37871pcs Stock]

  • 1 pcs$1.65378
  • 800 pcs$1.64555
Bilang ng Bahagi:
FCP099N60E
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET N-CH 600V TO220.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga module ng Power driver, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - Mga Rectifier ng Bridge ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FCP099N60E electronic components. FCP099N60E can be shipped within 24 hours after order. If you have any demands for FCP099N60E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCP099N60E Mga katangian ng produkto

Bilang ng Bahagi : FCP099N60E
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET N-CH 600V TO220
Serye : SuperFET® II
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 37A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 18.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 114nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3465pF @ 380V
Tampok ng FET : -
Power Dissipation (Max) : 357W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220-3
Pakete / Kaso : TO-220-3

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