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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  1. Bahay
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  5. FDS2670

ON Semiconductor - FDS2670

KEY Part #: K6409594

FDS2670 Pagpepresyo (USD) [117730pcs Stock]

  • 1 pcs$0.33940
  • 2,500 pcs$0.33771
Bilang ng Bahagi:
FDS2670
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET N-CH 200V 3A 8-SO.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays, Mga Transistor - JFET, Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays and Diode - Rectifiers - Arrays ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FDS2670 electronic components. FDS2670 can be shipped within 24 hours after order. If you have any demands for FDS2670, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS2670 Mga katangian ng produkto

Bilang ng Bahagi : FDS2670
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET N-CH 200V 3A 8-SO
Serye : PowerTrench®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1228pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 2.5W (Ta)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 8-SOIC
Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)

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