[12691pcs Stock]
- Bilang ng Bahagi:
- IRFB33N15D
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 150V 33A TO-220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Thyristors - SCR - Mga Module, Transistors - IGBTs - Single, Diode - Rectifiers - Single, Thyristors - DIACs, SIDACs, Diode - RF, Thyristors - Mga SCR and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFB33N15D electronic components. IRFB33N15D can be shipped within 24 hours after order. If you have any demands for IRFB33N15D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB33N15D Mga katangian ng produkto
Bilang ng Bahagi :
IRFB33N15D
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 150V 33A TO-220AB
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
150V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
33A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
56 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2020pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
3.8W (Ta), 170W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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