Vishay Semiconductor Diodes Division - EGF1THE3/67A

KEY Part #: K6457083

EGF1THE3/67A Pagpepresyo (USD) [340696pcs Stock]

  • 1 pcs$0.10856
  • 3,000 pcs$0.09032

Bilang ng Bahagi:
EGF1THE3/67A
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 1.3KV 1A DO214BA. Rectifiers 1300 Volt 1.0A 75ns Glass Passivated
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Arrays and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division EGF1THE3/67A electronic components. EGF1THE3/67A can be shipped within 24 hours after order. If you have any demands for EGF1THE3/67A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGF1THE3/67A Mga katangian ng produkto

Bilang ng Bahagi : EGF1THE3/67A
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 1.3KV 1A DO214BA
Serye : SUPERECTIFIER®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 1300V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 3V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 1300V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214BA
Package ng Tagabigay ng Device : DO-214BA (GF1)
Operating temperatura - Junction : -55°C ~ 150°C

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