Taiwan Semiconductor Corporation - 1N5406G B0G

KEY Part #: K6432076

1N5406G B0G Pagpepresyo (USD) [1159739pcs Stock]

  • 1 pcs$0.03189

Bilang ng Bahagi:
1N5406G B0G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 3A DO201AD.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
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Kumpetensyang Pakinabang:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5406G B0G Mga katangian ng produkto

Bilang ng Bahagi : 1N5406G B0G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 600V 3A DO201AD
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 3A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 25pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-201AD, Axial
Package ng Tagabigay ng Device : DO-201AD
Operating temperatura - Junction : -55°C ~ 150°C

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