BSZ16DN25NS3GATMA1 Pagpepresyo (USD) [115647pcs Stock]
- 1 pcs$0.31983
- Bilang ng Bahagi:
- BSZ16DN25NS3GATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 250V 10.9A 8TSDSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Diode - RF, Mga Transistor - JFET, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Programmable Unijunction and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSZ16DN25NS3GATMA1 electronic components. BSZ16DN25NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ16DN25NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ16DN25NS3GATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSZ16DN25NS3GATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 250V 10.9A 8TSDSON
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
250V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10.9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
165 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs :
11.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
920pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
62.5W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TSDSON-8
Pakete / Kaso :
8-PowerTDFN
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