IXRFSM12N100 Pagpepresyo (USD) [3782pcs Stock]
- 1 pcs$11.45278
- Bilang ng Bahagi:
- IXRFSM12N100
- Tagagawa:
- IXYS-RF
- Detalyadong Paglalarawan:
- 2A 1000V MOSFET IN SMPD PACKAGE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Diode - Zener - Arrays, Transistor - IGBTs - Arrays, Thyristors - SCR - Mga Module, Mga module ng Power driver, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS-RF IXRFSM12N100 electronic components. IXRFSM12N100 can be shipped within 24 hours after order. If you have any demands for IXRFSM12N100, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXRFSM12N100 Mga katangian ng produkto
Bilang ng Bahagi :
IXRFSM12N100
Tagagawa :
IXYS-RF
Paglalarawan :
2A 1000V MOSFET IN SMPD PACKAGE
Serye :
SMPD
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
15V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 6A, 15V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2875pF @ 800V
Tampok ng FET :
-
Power Dissipation (Max) :
940W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
16-SMPD
Pakete / Kaso :
16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
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