EPC - EPC2022

KEY Part #: K6407444

EPC2022 Pagpepresyo (USD) [19588pcs Stock]

  • 1 pcs$2.32586
  • 500 pcs$2.31429

Bilang ng Bahagi:
EPC2022
Tagagawa:
EPC
Detalyadong Paglalarawan:
GAN TRANS 100V 3MOHM BUMPED DIE.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays, Diode - Mga Rectifier ng Bridge, Diode - Zener - Arrays, Transistor - Programmable Unijunction, Diode - Zener - Single and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in EPC EPC2022 electronic components. EPC2022 can be shipped within 24 hours after order. If you have any demands for EPC2022, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2022 Mga katangian ng produkto

Bilang ng Bahagi : EPC2022
Tagagawa : EPC
Paglalarawan : GAN TRANS 100V 3MOHM BUMPED DIE
Serye : eGaN®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) : 100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 60A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 25A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds : 1500pF @ 50V
Tampok ng FET : -
Power Dissipation (Max) : -
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : Die
Pakete / Kaso : Die
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