SSM6J215FE(TE85L,F Pagpepresyo (USD) [603363pcs Stock]
- 1 pcs$0.06777
- 4,000 pcs$0.06743
- Bilang ng Bahagi:
- SSM6J215FE(TE85L,F
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET P CH 20V 3.4A ES6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - SCR - Mga Module, Diode - Mga Rectifier ng Bridge and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage SSM6J215FE(TE85L,F electronic components. SSM6J215FE(TE85L,F can be shipped within 24 hours after order. If you have any demands for SSM6J215FE(TE85L,F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6J215FE(TE85L,F Mga katangian ng produkto
Bilang ng Bahagi :
SSM6J215FE(TE85L,F
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET P CH 20V 3.4A ES6
Serye :
U-MOSVI
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.4A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
59 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
10.4nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
630pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
500mW (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
ES6
Pakete / Kaso :
SOT-563, SOT-666
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