Vishay Siliconix - SIHA12N60E-E3

KEY Part #: K6393242

SIHA12N60E-E3 Pagpepresyo (USD) [33639pcs Stock]

  • 1 pcs$1.22515
  • 10 pcs$1.05069
  • 100 pcs$0.84439
  • 500 pcs$0.65675
  • 1,000 pcs$0.54417

Bilang ng Bahagi:
SIHA12N60E-E3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET N-CH 600V 12A TO-220.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays, Diode - Rectifiers - Arrays, Diode - Rectifiers - Single, Transistor - Espesyal na Pakay, Transistor - Programmable Unijunction and Diode - Mga Rectifier ng Bridge ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SIHA12N60E-E3 electronic components. SIHA12N60E-E3 can be shipped within 24 hours after order. If you have any demands for SIHA12N60E-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHA12N60E-E3 Mga katangian ng produkto

Bilang ng Bahagi : SIHA12N60E-E3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET N-CH 600V 12A TO-220
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 380 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 58nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 937pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 33W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220 Full Pack
Pakete / Kaso : TO-220-3 Full Pack

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