STH110N10F7-6 Pagpepresyo (USD) [12429pcs Stock]
- 1,000 pcs$0.66354
- Bilang ng Bahagi:
- STH110N10F7-6
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 110A H2PAK-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Mga Module, Thyristors - SCR - Mga Module, Mga module ng Power driver, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Pre-Biased and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STH110N10F7-6 electronic components. STH110N10F7-6 can be shipped within 24 hours after order. If you have any demands for STH110N10F7-6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH110N10F7-6 Mga katangian ng produkto
Bilang ng Bahagi :
STH110N10F7-6
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 100V 110A H2PAK-6
Serye :
DeepGATE™, STripFET™ VII
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
110A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.5 mOhm @ 55A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5117pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
150W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
H2PAK-6
Pakete / Kaso :
TO-263-7, D²Pak (6 Leads + Tab)
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