EPC2012C Pagpepresyo (USD) [78588pcs Stock]
- 1 pcs$0.56967
- 1,000 pcs$0.56684
- Bilang ng Bahagi:
- EPC2012C
- Tagagawa:
- EPC
- Detalyadong Paglalarawan:
- GANFET TRANS 200V 5A BUMPED DIE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Mga Transistor - JFET, Diode - Rectifiers - Arrays, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in EPC EPC2012C electronic components. EPC2012C can be shipped within 24 hours after order. If you have any demands for EPC2012C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2012C Mga katangian ng produkto
Bilang ng Bahagi :
EPC2012C
Tagagawa :
EPC
Paglalarawan :
GANFET TRANS 200V 5A BUMPED DIE
Serye :
eGaN®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
1.3nC @ 5V
Vgs (Max) :
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Die Outline (4-Solder Bar)
Pakete / Kaso :
Die
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