[8771pcs Stock]
- Bilang ng Bahagi:
- FDB8870-F085
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 21A TO-263AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDB8870-F085 electronic components. FDB8870-F085 can be shipped within 24 hours after order. If you have any demands for FDB8870-F085, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB8870-F085 Mga katangian ng produkto
Bilang ng Bahagi :
FDB8870-F085
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 30V 21A TO-263AB
Serye :
Automotive, AEC-Q101, PowerTrench®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
23A (Ta), 160A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.9 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
132nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5200pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
160W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-263AB
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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