Vishay Semiconductor Diodes Division - ES3FHE3_A/I

KEY Part #: K6457048

ES3FHE3_A/I Pagpepresyo (USD) [322487pcs Stock]

  • 1 pcs$0.12103
  • 3,500 pcs$0.12043

Bilang ng Bahagi:
ES3FHE3_A/I
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 300V 3A DO214AB. Rectifiers 300 Volt 3.0A 35ns Glass Passivated
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module, Thyristors - Mga SCR, Diode - Rectifiers - Single, Diode - Mga Rectifier ng Bridge and Diode - RF ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division ES3FHE3_A/I electronic components. ES3FHE3_A/I can be shipped within 24 hours after order. If you have any demands for ES3FHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3FHE3_A/I Mga katangian ng produkto

Bilang ng Bahagi : ES3FHE3_A/I
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 300V 3A DO214AB
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 300V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 300V
Capacitance @ Vr, F : 30pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AB, SMC
Package ng Tagabigay ng Device : DO-214AB (SMC)
Operating temperatura - Junction : -55°C ~ 150°C

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