[12973pcs Stock]
- Bilang ng Bahagi:
- IRFB42N20D
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 44A TO-220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Diode - Zener - Arrays and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFB42N20D electronic components. IRFB42N20D can be shipped within 24 hours after order. If you have any demands for IRFB42N20D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB42N20D Mga katangian ng produkto
Bilang ng Bahagi :
IRFB42N20D
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 200V 44A TO-220AB
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
44A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
55 mOhm @ 26A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3430pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.4W (Ta), 330W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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