TK10J80E,S1E Pagpepresyo (USD) [37612pcs Stock]
- 1 pcs$1.21125
- 25 pcs$1.20523
- Bilang ng Bahagi:
- TK10J80E,S1E
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V TO-3PN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF, Thyristors - SCR - Mga Module, Diode - Zener - Arrays and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK10J80E,S1E electronic components. TK10J80E,S1E can be shipped within 24 hours after order. If you have any demands for TK10J80E,S1E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10J80E,S1E Mga katangian ng produkto
Bilang ng Bahagi :
TK10J80E,S1E
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 800V TO-3PN
Serye :
π-MOSVIII
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
250W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-3P(N)
Pakete / Kaso :
TO-3P-3, SC-65-3
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