Vishay Semiconductor Diodes Division - NSB8ATHE3/45

KEY Part #: K6445660

[2032pcs Stock]


    Bilang ng Bahagi:
    NSB8ATHE3/45
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    DIODE GEN PURP 50V 8A TO263AB.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistors - IGBTs - Single, Diode - Rectifiers - Arrays, Mga Transistor - Bipolar (BJT) - RF and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division NSB8ATHE3/45 electronic components. NSB8ATHE3/45 can be shipped within 24 hours after order. If you have any demands for NSB8ATHE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NSB8ATHE3/45 Mga katangian ng produkto

    Bilang ng Bahagi : NSB8ATHE3/45
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : DIODE GEN PURP 50V 8A TO263AB
    Serye : -
    Katayuan ng Bahagi : Discontinued at Digi-Key
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 50V
    Kasalukuyang - Average na Rectified (Io) : 8A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 8A
    Bilis : Standard Recovery >500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : -
    Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 50V
    Capacitance @ Vr, F : 55pF @ 4V, 1MHz
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package ng Tagabigay ng Device : TO-263AB
    Operating temperatura - Junction : -55°C ~ 150°C

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