[3944pcs Stock]
- Bilang ng Bahagi:
- SI3586DV-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 20V 2.9A 6-TSOP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI3586DV-T1-GE3 electronic components. SI3586DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3586DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3586DV-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI3586DV-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N/P-CH 20V 2.9A 6-TSOP
Serye :
TrenchFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.9A, 2.1A
Rds On (Max) @ Id, Vgs :
60 mOhm @ 3.4A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Kapangyarihan - Max :
830mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
Package ng Tagabigay ng Device :
6-TSOP
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