DMN60H080DS-13 Pagpepresyo (USD) [1084431pcs Stock]
- 1 pcs$0.03411
- Bilang ng Bahagi:
- DMN60H080DS-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 80MA SOT23.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single, Diode - Zener - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF, Mga Transistor - Bipolar (BJT) - RF and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN60H080DS-13 electronic components. DMN60H080DS-13 can be shipped within 24 hours after order. If you have any demands for DMN60H080DS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN60H080DS-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMN60H080DS-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 600V 80MA SOT23
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
80mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
100 Ohm @ 60mA, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
25pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1.1W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-23-3
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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