Infineon Technologies - BSS192PH6327FTSA1

KEY Part #: K6416475

BSS192PH6327FTSA1 Pagpepresyo (USD) [363189pcs Stock]

  • 1 pcs$0.10184
  • 1,000 pcs$0.07618

Bilang ng Bahagi:
BSS192PH6327FTSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET P-CH 250V 0.19A SOT-89.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Zener - Single and Transistor - Mga FET, MOSFET - Single ...
Kumpetensyang Pakinabang:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS192PH6327FTSA1 Mga katangian ng produkto

Bilang ng Bahagi : BSS192PH6327FTSA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET P-CH 250V 0.19A SOT-89
Serye : SIPMOS®
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 250V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 190mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.8V, 10V
Rds On (Max) @ Id, Vgs : 12 Ohm @ 190mA, 10V
Vgs (th) (Max) @ Id : 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs : 6.1nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 104pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 1W (Ta)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-SOT89
Pakete / Kaso : TO-243AA