IRF7341GTRPBF Pagpepresyo (USD) [100763pcs Stock]
- 1 pcs$0.38805
- 4,000 pcs$0.37253
- Bilang ng Bahagi:
- IRF7341GTRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 55V 5.1A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistor - Espesyal na Pakay, Diode - Rectifiers - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF7341GTRPBF electronic components. IRF7341GTRPBF can be shipped within 24 hours after order. If you have any demands for IRF7341GTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7341GTRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF7341GTRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 55V 5.1A
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.1A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 5.1A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs :
44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
780pF @ 25V
Kapangyarihan - Max :
2.4W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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