[2222pcs Stock]
- Bilang ng Bahagi:
- SSM3J36MFV,L3F
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET P-CH 20V 0.33A VESM.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Thyristors - SCR - Mga Module, Diode - Zener - Arrays, Transistor - IGBTs - Mga Module and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage SSM3J36MFV,L3F electronic components. SSM3J36MFV,L3F can be shipped within 24 hours after order. If you have any demands for SSM3J36MFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J36MFV,L3F Mga katangian ng produkto
Bilang ng Bahagi :
SSM3J36MFV,L3F
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET P-CH 20V 0.33A VESM
Serye :
U-MOSIII
Katayuan ng Bahagi :
Discontinued at Digi-Key
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
330mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
1.31 Ohm @ 100mA, 4.5V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
1.2nC @ 4V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
43pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
150mW (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
VESM
Pakete / Kaso :
SOT-723
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