[3875pcs Stock]
- Bilang ng Bahagi:
- APTM120A80FT1G
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 1200V 14A SP1.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - Programmable Unijunction, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - DIACs, SIDACs, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APTM120A80FT1G electronic components. APTM120A80FT1G can be shipped within 24 hours after order. If you have any demands for APTM120A80FT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM120A80FT1G Mga katangian ng produkto
Bilang ng Bahagi :
APTM120A80FT1G
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET 2N-CH 1200V 14A SP1
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
14A
Rds On (Max) @ Id, Vgs :
960 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
6696pF @ 25V
Kapangyarihan - Max :
357W
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Pakete / Kaso :
SP1
Package ng Tagabigay ng Device :
SP1
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