BUK9Y4R8-60E,115 Pagpepresyo (USD) [131812pcs Stock]
- 1 pcs$0.28061
- 1,500 pcs$0.24426
- Bilang ng Bahagi:
- BUK9Y4R8-60E,115
- Tagagawa:
- Nexperia USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 100A LFPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Single and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Nexperia USA Inc. BUK9Y4R8-60E,115 electronic components. BUK9Y4R8-60E,115 can be shipped within 24 hours after order. If you have any demands for BUK9Y4R8-60E,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK9Y4R8-60E,115 Mga katangian ng produkto
Bilang ng Bahagi :
BUK9Y4R8-60E,115
Tagagawa :
Nexperia USA Inc.
Paglalarawan :
MOSFET N-CH 60V 100A LFPAK
Serye :
Automotive, AEC-Q101, TrenchMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
4.1 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
7853pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
238W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
LFPAK56, Power-SO8
Pakete / Kaso :
SC-100, SOT-669
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